Heike Riel

Date

1 April 2015

Host

Klaus Ensslin

Title

III-V Nanowires - From Materials to Nanoscale Devices

Abstract

Approaching fundamental limits in scaling-down conventional silicon microelectronic devices forces the semiconductor industry to research and develop novel materials and device geometries. In that regard bottom-up grown nanowires are very attractive materials for direct integration of III-V semiconductors on silicon thus opening up new possibilities for the design and fabrication of electronic and optoelectronic devices. In this talk I will give an overview about our activities in the field of semiconducting nanowires. In particular, I will discuss our latest results in nanowire growth, electrical, thermo-electrical and optical characterization, effects of strain, and nanowire-based FETs, tunnel diodes, and Tunnel FETs for energy-efficient computing.